VISHAY · FETs & Power MOSFETs · MPN SIHG186N60EF-GE3
No reviews yet — be the first to review VISHAY SIHG186N60EF-GE3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Output Capacitance(Coss) | 52pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 193mΩ@10V |
| Input Capacitance(Ciss) | 1.081nF |
| Type | N-Channel |
600V 18A 5V 156W 193mΩ@10V N-Channel TO-247-3 Single FETs, MOSFETs RoHS