VISHAY · FETs & Power MOSFETs · MPN SIHG17N60D-E3
No reviews yet — be the first to review VISHAY SIHG17N60D-E3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 90nC@10V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 340mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.78nF |
600V 17A 5V 340mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS