VISHAY · FETs & Power MOSFETs · MPN SIHG15N80AEF-GE3
No reviews yet — be the first to review VISHAY SIHG15N80AEF-GE3.
| Gate Charge(Qg) | 54nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 156W |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.128nF |
800V 13A 4V 156W 350mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS