VISHAY · FETs & Power MOSFETs · MPN SIHG11N80E-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 179W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 440mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.67nF |
800V 8A 2V 179W 440mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS