VISHAY · FETs & Power MOSFETs · MPN SIHG100N60E-GE3
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 84pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 86mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.851nF |
| Type | N-Channel |
600V 30A 5V 208W 86mΩ@10V 1 N-channel N-Channel TO-247AC Single FETs, MOSFETs RoHS