VISHAY · FETs & Power MOSFETs · MPN SIHG080N60E-GE3
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.557nF |
600V 35A 3V 227W 80mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS