VISHAY · FETs & Power MOSFETs · MPN SIHFU9220-GE3
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.5W;42W |
| RDS(on) | 1.5Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
200V 2.3A 1.5Ω@10V 1 P-Channel TO-251-3 Single FETs, MOSFETs RoHS