VISHAY SIHFU310-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHFU310-GE3

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W;25W
Reverse Transfer Capacitance (Crss@Vds)6.3pF
RDS(on)3.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)170pF

Technical details

400V 1.7A 2V 3.6Ω@10V 1 N-channel TO-251AA Single FETs, MOSFETs RoHS

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