VISHAY SIHFR9310TR-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHFR9310TR-GE3

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)13nC@10V
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
RDS(on)7Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)270pF

Technical details

400V 1.8A 4V 50W 7Ω@10V 1 P-Channel TO-252AA Single FETs, MOSFETs RoHS

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