VISHAY SIHFR9310-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHFR9310-GE3

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)7Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)270pF
TypeP-Channel

Technical details

400V 1.8A 4V 50W 7Ω@10V 1 P-Channel P-Channel TO-252AA Single FETs, MOSFETs RoHS

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