VISHAY · FETs & Power MOSFETs · MPN SIHFR9014-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Output Capacitance(Coss) | 170pF |
| Current - Continuous Drain(Id) | 5.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 500mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 270pF |
| Type | P-Channel |
60V 5.1A 4V 2.5W 500mΩ@10V 1 P-Channel P-Channel TO-252AA Single FETs, MOSFETs RoHS