VISHAY SIHFR420A-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHFR420A-GE3

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)2.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)2.7pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)340pF
TypeN-Channel

Technical details

500V 2.1A 4.5V 83W 3Ω@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS

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