VISHAY · FETs & Power MOSFETs · MPN SIHFR220-GE3
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| Gate Charge(Qg) | 14nC |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 4.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 260pF |
| Type | N-Channel |
200V 4.8A 4V 2.5W 800mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS