VISHAY · FETs & Power MOSFETs · MPN SIHFR1N60ATR-GE3
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 890mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
600V 890mA 2V 36W 1 N-channel TO-252 Single FETs, MOSFETs RoHS