VISHAY · FETs & Power MOSFETs · MPN SIHFR1N60A-GE3
No reviews yet — be the first to review VISHAY SIHFR1N60A-GE3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 14nC@10V |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 36W |
| RDS(on) | 7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 229pF |
600V 1.4A 4V 36W 7Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS