VISHAY · FETs & Power MOSFETs · MPN SIHFR024-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W;42W |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 640pF |
60V 14A 4V 100mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS