VISHAY SIHFL210TR-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHFL210TR-GE3

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)8.2nC@10V
Current - Continuous Drain(Id)960mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2W;3.1W
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF

Technical details

N-Channel 200V 960mA 2W 3.1W Surface Mount SOT-223

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