VISHAY · FETs & Power MOSFETs · MPN SIHFBF30S-GE3
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| Drain to Source Voltage | 900V |
|---|---|
| Gate Charge(Qg) | 78nC@10V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 3.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
900V 3.6A 4V 125W 3.7Ω@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS