VISHAY · FETs & Power MOSFETs · MPN SIHFBC40AS-GE3
No reviews yet — be the first to review VISHAY SIHFBC40AS-GE3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
600V 6.2A 2V 125W 1.2Ω@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS