VISHAY · FETs & Power MOSFETs · MPN SIHFB20N50K-E3
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 280W |
| RDS(on) | 250mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.87nF |
| Type | N-Channel |
500V 20A 5V 280W 250mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS