VISHAY · FETs & Power MOSFETs · MPN SIHF9Z24STRR-GE3
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.7W;60W |
| RDS(on) | 280mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 570pF |
60V 11A 280mΩ@10V 1 P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS