VISHAY SIHF9630S-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHF9630S-GE3

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)800mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)700pF
TypeP-Channel

Technical details

200V 6.5A 4V 74W 800mΩ@10V 1 P-Channel P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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