VISHAY SIHF9540S-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHF9540S-GE3

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Specifications

Gate Charge(Qg)61nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
RDS(on)200mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.4nF

Technical details

100V 19A 4V 150W 200mΩ@10V 1 P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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