VISHAY · FETs & Power MOSFETs · MPN SIHF6N40D-E3
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| Drain to Source Voltage | 400V |
|---|---|
| Gate Charge(Qg) | 18nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 850mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 311pF |
400V 4A 3V 30W 850mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS