VISHAY · FETs & Power MOSFETs · MPN SIHF5N50D-E3
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 28.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 1.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 325pF |
500V 3.4A 5V 28.8W 1.5Ω@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS