VISHAY SIHF530STRL-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHF530STRL-GE3

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Specifications

Gate Charge(Qg)26nC
Drain to Source Voltage100V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)670pF
TypeN-Channel

Technical details

N-Channel 100V 10A 88W Surface Mount D2PAK(TO-263)

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