VISHAY · FETs & Power MOSFETs · MPN SIHF530-GE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 26nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+175℃ |
| Pd - Power Dissipation | 88W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
100V 10A 88W 160mΩ@10V 1 N-channel TO-220AB-3 Single FETs, MOSFETs RoHS