VISHAY SIHF520STRR-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHF520STRR-GE3

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)9.2A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)270mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)360pF
TypeN-Channel

Technical details

100V 9.2A 4V 60W 270mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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