VISHAY SIHF520STRL-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHF520STRL-GE3

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.7W;60W
RDS(on)270mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)360pF

Technical details

100V 6.5A 4V 270mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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