VISHAY SIHF074N65E-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHF074N65E-GE3

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)14A
Output Capacitance(Coss)106pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation39W
RDS(on)70mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)2.904nF
TypeN-Channel

Technical details

N-Channel 650V 14A 39W Through Hole TO-220

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