VISHAY · FETs & Power MOSFETs · MPN SIHD7N60ET5-GE3
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 680pF |
600V 5A 2V 78W 600mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS