VISHAY · FETs & Power MOSFETs · MPN SIHD6N80E-GE3
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 37pF |
| Current - Continuous Drain(Id) | 5.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 940mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 827pF |
| Type | N-Channel |
800V 5.4A 4V 78W 940mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS