VISHAY · FETs & Power MOSFETs · MPN SIHD6N65ET1-GE3
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 820pF |
650V 7A 4V 78W 600mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS