VISHAY · FETs & Power MOSFETs · MPN SIHD6N62E-GE3
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 620V |
| Output Capacitance(Coss) | 36pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 900mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 578pF |
620V 6A 4V 78W 900mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS