VISHAY SIHD3N50DT1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHD3N50DT1-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage-
Current - Continuous Drain(Id)-
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number-
Input Capacitance(Ciss)-

Technical details

TO-252 Single FETs, MOSFETs RoHS

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