VISHAY · FETs & Power MOSFETs · MPN SIHD3N50D-BE3
No reviews yet — be the first to review VISHAY SIHD3N50D-BE3.
| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 3.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 175pF |
| Type | N-Channel |
500V 3A 5V 69W 3.2Ω@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS