VISHAY · FETs & Power MOSFETs · MPN SIHD2N80AE-GE3
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| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 62.5W |
| RDS(on) | 2.9Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
800V 1.8A 2V 62.5W 2.9Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS