VISHAY · FETs & Power MOSFETs · MPN SIHD1K4N60E-GE3
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| Gate Charge(Qg) | 7.5nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 1.45Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 172pF |
600V 2.6A 3V 63W 1.45Ω@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS