VISHAY · FETs & Power MOSFETs · MPN SIHD14N60ET1-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 64nC@10V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 147W |
| RDS(on) | 309mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.205nF |
600V 13A 4V 147W 309mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS