VISHAY · FETs & Power MOSFETs · MPN SIHD12N50E-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 50nC@10V |
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 52pF |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 886pF |
500V 10.5A 4V 114W 380mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS