VISHAY · FETs & Power MOSFETs · MPN SIHD11N80AE-T1-GE3
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 804pF |
800V 8A 4V 78W 1 N-channel DPAK Single FETs, MOSFETs RoHS