VISHAY · FETs & Power MOSFETs · MPN SIHB8N50D-GE3
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 156W |
| RDS(on) | 850mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 527pF |
500V 5.5A 5V 156W 850mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS