VISHAY · FETs & Power MOSFETs · MPN SIHB6N80AE-GE3
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| Output Capacitance(Coss) | 24pF |
|---|---|
| Pd - Power Dissipation | 62.5W |
| Drain to Source Voltage | 800V |
| Configuration | - |
| Gate Charge(Qg) | 15nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 826mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 422pF |
62.5W 800V 2V 826mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS