VISHAY · FETs & Power MOSFETs · MPN SIHB4N80E-GE3
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 69W |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 622pF |
800V 4.3A 2V 69W 1.1Ω@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS