VISHAY · FETs & Power MOSFETs · MPN SIHB35N60E-GE3
No reviews yet — be the first to review VISHAY SIHB35N60E-GE3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 132nC@10V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 94mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.76nF |
| Type | N-Channel |
600V 32A 4V 250W 94mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS