VISHAY · FETs & Power MOSFETs · MPN SIHB33N60ET5-GE3
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 600V |
| Gate Charge(Qg) | 150nC@10V |
| Output Capacitance(Coss) | 156pF |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 278W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.508nF |
600V 33A 4V 278W 99mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS