VISHAY · FETs & Power MOSFETs · MPN SIHB30N60ET1-GE3
No reviews yet — be the first to review VISHAY SIHB30N60ET1-GE3.
| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
600V 29A 4V 250W 125mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS