VISHAY · FETs & Power MOSFETs · MPN SIHB30N60E-GE3
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 138pF |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
| Type | N-Channel |
N-Channel 600V 29A 250W Surface Mount D2PAK(TO-263)