VISHAY · FETs & Power MOSFETs · MPN SIHB25N50E-GE3
No reviews yet — be the first to review VISHAY SIHB25N50E-GE3.
| Gate Charge(Qg) | 86nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 145mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.98nF |
N-Channel 500V 26A 250W Surface Mount D2PAK(TO-263)