VISHAY · FETs & Power MOSFETs · MPN SIHB24N80AE-GE3
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 89nC@10V |
| Output Capacitance(Coss) | 65pF |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 184mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.836nF |
| Type | N-Channel |
N-Channel 800V 21A 208W Surface Mount D2PAK(TO-263)